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Infrared Emitting Diodes(GaAIAs)
KFL-1ML-N
1. Description
The KFL-1ML-N is a high-power GaAlAs IRED mounted in TO-46K type header with clear epoxy encapsulation.
The IRED have a with angular response and relatively low-cost compared to can type devices.
2. Features
Wide angular response Peak emission wavelength ?p=850nm Relativery low-cost againstmetal can package Low profile package
3. Applications
Transportation sensors Security switches
4. Package Outline
ALL DIMENSIONS IN MILLIMETERS
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KKC-QM-043-2
Infrared Emitting Diodes(GaAIAs)
KFL-1ML-N
5. Absolute Maximum Ratings Parameter
Reverse Voltage Forward Current Pulse Forward Current (see Note 1) Power Dissipation Operating Temperature Storage Temperature Soldering Temperature (see Note 2)
[TA = 25E]
Symbol
VR IF IFP PD Topr. Tstg. Tsol.
Ratings
5 80 1 140 -25 ~ +80 -30 ~ +100 260
Unit
V I A mW E
E
E
Notes : 1. Pulse Width : tw=100 i ec. Period : T=10 msec. s 2. For MAX. 5 seconds at the position of 2 mm from the resin edge.
6. Electro-optical Characteristics Item
Forward Voltage Reverse Current Capacitance Peak Emission Wavelength Spectral Bandwidth Radiant Intensity Half Angle
[TA = 25E]
Symbol
VF IR Ct e p Ae PO
A e
Conditions
IF = 50 mA VR = 5 V f=1MHz IF = 50 mA IF = 50 mA IF = 50 mA
Min
Typ
1.5 25 850 30 14 3/463
Max
1.7 10
Unit
V E pF N deg.
7. Inspection Criteria
7-1. In electrical and optical characteristics, all products are inspected for following 3 items. Reverse Voltage : BVR Forward Voltage : VF Radiant Intensity : PO 7-2. No particular inspections shall be carried out for items other than those above. However they shall satisfy the ratings.
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KKC-QM-043-2
Infrared Emitting Diodes(GaAIAs)
KFL-1ML-N
8. Typical Electrical-optical Characteristics Curves aPower dissipation Vs.
Ambient temperature
( N) 200 Collector power dissipation Pc 160 120 80 40 0
aRadiant intensity Vs.
Forward current
( N) Radiant intensity(P ) O 101 Ta=25E Relative radiant intensity(P O )
aRelative radiant intensity
Ambient temperature
Vs.
10 1 0.1
100
10-1 10-2 0 10
0
30
60
90
120
150 (E)
Ambient temperature Ta
101 102 103 F Forward current(I )
-20 ( I)
0 20 40 60 80 100 (E) Ambient temperature(Ta)
a Relative intensity Vs. Wavelength
(%) Ta=25E 100 Relative intensity S 80 60 40 20 0 400 500 600 700 800 900 1000 1100( ) Wavelength(e)
a Forward current Vs. Forward voltage
(I) Ta=25E Forward current(I ) F 100
+60
aRadiant Pattern
Angle(deg.)
+20
Ta=25E
0
-20
-40
-60
0 +4
50
+80
50
-80
-100
+100
0
50
100
50
100
0
0
0.5 1.0 1.5 2.0 Forward voltage(V ) F
(V)
Relative Sensitivity(%)
a Relative radiant intensity Vs. Distance
(%) Relative radiant intensity(P ) O
Ta=25E
100
10
1
1
10
100
((R))
Distance( )
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KKC-QM-043-2
Infrared Emitting Diodes(GaAIAs)
KFL-1ML-N
9. Cautions in Usage
9-1. Store and use where there is no exterior force that will cause change in shape. 9-2. Store and use where there is no Hydrogen Sulfide gas, or any other corrosive gas. 9-3. The bending or cutting of the lead should be done at room temperature, no force being applied on the package. 9-4. Solder the lead pin under conditions of the absolute maximum rating chart, and do not apply force on the lead pin after soldering.
10. Guarantee Period and Scope
10-1. Period One year after delivery to the desired place. 10-2. Scope Replacement of products will be done, if any problems lie in our company's products. However, we are not liable for your damage by lack of caution.
11. Others
Any doubts concerning this specfication should be discussed fully by both parties.
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KKC-QM-043-2

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